Preparation of low-stress SiNx films by catalytic chemical vapor deposition at low temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 4098-4102

  Takano, Masahiro ^a   Niki, Toshikazu ^b,d   Heya, Akira ^a   Osono, Tetsuo ^c   Yonezawa, Yasuto ^a   Minamikawa, Toshiharu ^a   Muroi, Susumu ^d   Minami, Shigehira ^d   Masuda, Atsushi ^c   Umemoto, Hironobu ^c   Matsumura, Hideki ^c  

^a INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d Ishikawa Seisakusho Ltd   (Japan)

Author keywords

Atomic hydrogen; Barrier film; Catalytic chemical vapor deposition; Gas desorption; Hot wire chemical vapor deposition; Mass density; Silicon nitride (SiNx); Stress

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRENGTH; DESORPTION; FILM PREPARATION; PASSIVATION; SHRINKAGE; SILICON NITRIDE; TENSILE STRENGTH;

ATOMIC HYDROGEN; BARRIER FILM; CATALYTIC CHEMICAL VAPOR DEPOSITION; GAS DESORPTION; HOT-WIRE CHEMICAL VAPOR DEPOSITION; MASS DENSITY; SILICON NITRIDE (SINX);

THIN FILMS;

EID: 23944510632     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.4098     Document Type: Article

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