Device degradation during low temperature ECR-CVD. PART III: GaAs/InGaP HEMTs

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 1027-1030

  Lee, J W ^a   Mackenzie, K D ^a   Johnson, D ^a   Shul, R J ^b   Pearton, S J ^c   Abernathy, C R ^c   Ren, F ^c  

^a Qualtx Technology Inc   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC COATINGS; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; LOW TEMPERATURE OPERATIONS; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILANES; SILICON NITRIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

PLASMA CHEMISTRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032094001     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)80025-7     Document Type: Article

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