Effect of atomic hydrogen on preparation of highly moisture-resistive SiNx films at low substrate temperatures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 12 A, 2004, Pages

  Heya, Akira ^a   Niki, Toshikazu ^b   Takano, Masahiro ^a   Yonezawa, Yasuto ^a   Minamikawa, Toshiharu ^a   Muroi, Susumu ^c   Minami, Shigehira ^c   Izumi, Akira ^d,e   Masuda, Atsushi ^d   Umemoto, Hironobu ^d   Matsumura, Hideki ^d  

^a INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Ishikawa Seisakusho Ltd   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^e KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic hydrogen; Catalytic chemical vapor deposition; Hot wire chemical vapor deposition; Low temperature formation; Moisture resistivity; Silicon nitride (SiNx)

Indexed keywords

CATALYSIS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; LOW TEMPERATURE EFFECTS; MOISTURE; SILICON NITRIDE; STOICHIOMETRY; SUBSTRATES;

ATOMIC HYDROGEN; CATALYTIC CHEMICAL VAPOR DEPOSITION; HOT-WIRE CHEMICAL VAPOR DEPOSITION; LOW-TEMPERATURE FORMATION; MOISTURE RESISTIVITY;

THIN FILMS;

EID: 19944431580     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1546     Document Type: Article

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