InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy

Nanotechnology

Volumn 19, Issue 45, 2008, Pages

  He, Jun ^a   Yadavalli, Kameshwar ^a   Zhao, Zuoming ^a   Li, Ning ^a   Hao, Zhibiao ^a   Wang, Kang L ^a   Jacob, Ajey P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; OPTICAL PROPERTIES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON COMPOUNDS;

DEPLETION REGIONS; ELECTRONIC FUNCTIONALITIES; EPITAXIALLY GROWN; HOLE DIAMETERS; INAS/GAAS; OPTICAL QUALITIES; OXIDE LAYERS; PHOTOLUMINESCENCE SPECTRUMS; POTENTIAL BENEFITS; QUANTUM DOTS; QUANTUM STRUCTURES; QUANTUM WELLS; SEMI-CONDUCTORS; SI(001); SILICON TECHNOLOGIES;

SILICON;

NANOMATERIAL; QUANTUM DOT; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; DEPLETION; ELECTRONICS; MATERIALS TESTING; MOLECULAR INTERACTION; OPTICS; PARTICLE SIZE; PHOTOLUMINESCENCE; POWER SPECTRUM; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE; TEMPERATURE DEPENDENCE;

EID: 58149269449     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/45/455607     Document Type: Article

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