Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6279-6283

  Duarte, C A ^a   Da Silva, E C F ^a   Quivy, A A ^a   Da Silva, M J ^a   Martini, S ^a   Leite, J R ^a   Meneses, E A ^b   Lauretto, E ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; HIGH TEMPERATURE EFFECTS; IMAGE ANALYSIS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037607481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1568538     Document Type: Article

References (24)

1. For a recent review see, D. B. Bimberg, M. Grundmann, and N. N. Ledentsov, in Quantrum Dot Heterostructures (Wiley, London, 1999).
2. D. Bimberg, M. Grundmann, and N. Ledentsov, MRS Bull. 23, 31 (1998).
3. R. Heitz, T. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
4. D. Leonard, M. Krishnamurthy, S. Fafard, J. L. Merz, and P. M. Petroff, J. Vac. Sci. Technol., B 12, 1063 (1994).
5. H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, and M. P. Lisitsa, Phys. Rev. B 62, 7213 (2000).
6. N. N. Ledentsov, M. Grundmann, N. Kirstaedter et al., Solid-State Electron. 40, 875 (1996).
7. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, S. Malik, D. Childs, and R. Murray, J. Cryst. Growth 227-228, 1000 (2001).
8. J. M. Garcia, T. Mankad, P. O. Holtz, P. J. Wellman, and P. M. Petroff, Appl. Phys. Lett. 72, 3172 (1998).
9. A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, J. Cryst. Growth 175/176, 771 (1997).
10. L. Brusaferri, S. Sanguinetti, E. Grilli et al., Appl. Phys. Lett. 69, 3354 (1996).
11. Z. Y. Xu, Z. D. Lu, X. P. Yang, Z. L. Yuan, B. Z. Zheng, J. Z. Xu, W. K. Ge, Y. Wang, J. Wang, and L. L. Chang, Phys. Rev. B 54, 11528 (1996).
12. Y. C. Zhang, C. J. Huang, F. Q. Liu, B. Xu, J. Wu, Y. H. Chen, D. Ding, W. H. Jiang, X. L. Ye, and Z. G. Wang, J. Appl. Phys. 90, 1973 (2001).
13. W. H. Jiang, X. L. Ye, B. Xu, H. Z. Xu, D. Ding, J. B. Liang, and Z. G. Wang, J. Appl. Phys. 88, 2529 (2000).
14. D. I. Lubyshev, P. P. González-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, Appl. Phys. Lett. 68, 205 (1996).
15. D. L. Huffaker and D. G. Deppe, Appl. Phys. Lett. 73, 366 (1998).
16. M. J. da Silva, A. A. Quivy, P. P. González-Borrero, E. Marega, Jr., and J. R. Leite, J. Cryst. Growth 241, 19 (2002).
17. M. J. da Silva, A. A. Quivy, P. P. González-Borrero, N. T. Moshegov, and E. Marega, Jr., J. Cryst. Growth 227-228, 1025 (2001).
18. S. Martini, A. A. Quivy, A. Tabata, and J. R. Leite, J. Appl. Phys. 90, 2280 (2001).
19. H. W. Yoon, D. R. Wake, and J. P. Wolfe, Phys. Rev. B 54, 2763 (1996).
20. F. Adler, M. Geiger, A. Bauknecht, F. Scholz, H. Schweizer, M. H. Pilkuhn, B. Ohnesorge, and A. Forchel, J. Appl. Phys. 80, 4019 (1996).
21. B. Ohnesorge, M. Albrecht, J. Oshinowo, A. Forchel, and Y. Arakawa, Phys. Rev. B 54, 11532 (1996).
22. For a theoretical revision of the tunnel coupling in semiconductor heterostructures see R. Ferreira and G. Bastard, Rep. Prog. Phys. 60, 345 (1997).
23. H. W. Yoon, D. R. Wake, J. P. Wolfe, and H. Morkoç, Phys. Rev. B 46, 13461 (1992).
24. L. W. Wang and Alex Zunger, Phys. Rev. B 53, 9579 (1996).