Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots

Materials Science and Engineering C

Volumn 23, Issue 6-8, 2003, Pages 683-686

  Fukatsu, S ^a,b   Jo, M ^a   Ishida, K ^a   Yasuhara, N ^a   Kawamoto, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Amplified spontaneous emission; Compound semiconductor; LED; Quantum dots; Si

Indexed keywords

AMPLIFICATION; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; QUANTUM EFFICIENCY; SELF ASSEMBLY; SILICON; SPONTANEOUS EMISSION;

RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM DOTS;

SILICON;

EID: 0344688197     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2003.09.144     Document Type: Article

References (4)

1. Jo M. Ishida K. Kawamoto K. Fukatsu S. Phys. Status Solidi 4 2003 1117
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3. Van de Walle C.G. Phys. Rev., B 39 1989 1871
4. M. Jo, N. Yasuhara, K. Kawamoto, S. Fukatsu, Physica E (in press)