SCOPUS 정보 검색 플랫폼

Volumn 240, Issue 3-4, 2002, Pages 395-400

Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer

(9) He, J a Xu, B a Wang, Z G a Qu, S C a Liu, F Q a Zhu, T W a Ye, X L a Zhao, F A a Meng, X Q a

Author keywords

A3. Molecular beam epitaxy; Al. Photoluminescence; B1. Nanomaterials; B1. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

EPITAXIAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036570419 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00945-4 Document Type: Article

Times cited : (19)

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