Growth, structural, and optical properties of self-assembled (In,Ga)As quantum posts on GaAs

Nano Letters

Volumn 7, Issue 3, 2007, Pages 802-806

  He, J ^a   Krenner, H J ^a   Pryor, C ^b   Zhang, J P ^a   Wu, Y ^a   Allen, D G ^c   Morris, C M ^c   Sherwin, M S ^c   Petroff, P M ^a  

^a University of California   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DELOCALIZATION; INTRASUBBAND TRANSITIONS; QUANTUM POSTS;

EXCITONS; GROWTH RATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34047175558     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070132r     Document Type: Article

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