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Volumn 80, Issue 20, 2002, Pages 3706-3708

Observation of dopant-mediated intermixing at Ge/Si Interface

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; B-DOPING; CODIFFUSION; EXCESS VACANCY; P-N JUNCTION DEPTH; SECONDARY ION MASS SPECTROSCOPY; SI SUBSTRATES;

EID: 79956040074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480485     Document Type: Article
Times cited : (23)

References (12)
  • 5
    • 0014615843 scopus 로고
    • edited by R. R. Haberecht and E. L. Kern (Electrochemical Society, New York)
    • D. L. Kendall and D. B. DeVries, in Semiconductor Silicon, edited by R. R. Haberecht and E. L. Kern (Electrochemical Society, New York, 1969), p. 358.
    • (1969) Semiconductor Silicon , pp. 358
    • Kendall, D.L.1    Devries, D.B.2
  • 9
    • 0005501408 scopus 로고
    • phr PHRVAO 0031-899X
    • R. N. Hall and W. C. Dunlap, Phys. Rev. 80, 467 (1950). phr PHRVAO 0031-899X
    • (1950) Phys. Rev. , vol.80 , pp. 467
    • Hall, R.N.1    Dunlap, W.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.