Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction

Physical Review Letters

Volumn 86, Issue 18, 2001, Pages 4068-4071

  Dreiner, S ^a   Schurmann M ^a   Westphal, C ^a,b   Zacharias, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; KINETIC ENERGY; LEAST SQUARES APPROXIMATIONS; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE;

ANGLE SCANNED PHOTOELECTRON DIFFRACTION; ELECTRON ENERGY RESOLUTION; PHOTOEMISSION EXTENDED FINE STRUCTURE; PHOTON ENERGY RESOLUTION;

INTERFACES (MATERIALS);

EID: 0035971438     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.4068     Document Type: Article

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