Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1370-1374

  Sekine, Katsuyuki ^b   Saito, Yuji ^b   Hirayama, Masaki ^b   Ohmi, Tadahiro ^a,b  

^a IEEE

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; FILM GROWTH; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENTS; GIGA SCALE INTEGRATION; RADIAL LINE SLOT ANTENNA;

ULTRATHIN FILMS;

EID: 0034225418     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848279     Document Type: Article

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