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Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5242-5246

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using Bi-layer nanoimprint lithography

(5) Byeon, Kyeong Jae a Hwang, Seon Yong a Hong, Chang Hee b Baek, Jong Hyeob c Lee, Heon a

a Korea University (South Korea)

b Chonbuk National University (South Korea)

c Korea Photonics Technology Institute (KOPTI) (South Korea)

Author keywords

Light Emitting Diodes; Nanoimprint Lithography; Photoluminescence; Photon Extraction Efficiency; Two Dimensional Photonic Crystals

Indexed keywords

AR PLASMAS; GAN LAYERS; INDUCTIVELY COUPLED PLASMA ETCHINGS; INGAN/GAN; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTIONS; LIQUID PHASE; MULTI QUANTUM WELLS; PERIODIC ARRAYS; PHOTONIC CRYSTAL (;

CRYSTAL ATOMIC STRUCTURE; CRYSTAL STRUCTURE; CRYSTALS; CURRENT DENSITY; DIODES; ETCHING; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; NANOIMPRINT LITHOGRAPHY; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLUMINESCENCE; PHOTONS; PLASMA ETCHING; PLASMAS; RESINS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; SPONTANEOUS EMISSION; TWO DIMENSIONAL;

PHOTONIC CRYSTALS;

EID: 58149242774 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: 10.1166/jnn.2008.1391 Document Type: Conference Paper

Times cited : (9)

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