Self-aligned, vertical-channel, polymer field-effect transistors

Science

Volumn 299, Issue 5614, 2003, Pages 1881-1884

  Stutzmann, Natalie ^a   Friend, Richard H ^a   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; INSULATING MATERIALS; INTERFACIAL ENERGY; ORGANIC POLYMERS; SPIN COATING;

SOLID-STATE EMBOSSING;

FIELD EFFECT TRANSISTORS;

POLYETHYLENE TEREPHTHALATE; POLYMER;

POLYMER;

ARTICLE; CHEMICAL MODIFICATION; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRODE; ENERGY; HYSTERESIS; PRIORITY JOURNAL; REPRODUCIBILITY; SEMICONDUCTOR; SOLID STATE; STRUCTURE ANALYSIS; SURFACE PROPERTY; TEMPERATURE; THICKNESS;

EID: 0037459370     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1081279     Document Type: Article

References (25)

1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, ed. 2, 1981).
2. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, D. M. d. Leeuw, Appl. Phys. Lett. 73, 108 (1998).
3. Z. Bao, Y. Feng, A. Dodabaiapur, V. R. Raju, A. J. Lovinger, Chem. Mater. 9, 1299 (1997).
4. J. A. Rogers, Z. Bao, A. Makhija, P. Braun, Adv. Mater. 11, 741 (1999).
5. J. A. Rogers, Z. Bao, V. R. Raju, Appl. Phys. Lett. 72, 2716 (1998).
6. H. Sirringhaus et al., Science 290, 2123 (2000).
7. J. A. Rogers, A. Dodabatapur, Z. Bao, H. E. Katz, Appl. Phys. Lett. 75, 1010 (1999).
8. M. T. Gale, in Micro-Optics, H. P. Herzig, Ed. (Taylor and Francis, London, 1997), pp. 153-177.
9. S. Y. Chou, P. R. Krauss, P. J. Renstrom, Science 272, 8S (1996).
10. W. Bacher, W. Menz, J. Mohr, IEEE Trans. Inst. Electron. 42, 431 (1995).
11. S. Y. Chou, C. Kelmel, J. Gu, Nature 417, 835 (2002).
12. F. Gamier, R. Hajlaoui, M. E. Kassmi, Appl. Phys. Lett. 73, 1721 (1998).
13. N. Stutzmann, T. A. Tervoort, C. W. M. Bastiaansen, P. Smith, Nature 407, 613 (2000).
14. The present method of cutting source-drain electrodes resembles - although on a different length scale - that employed by the inventors of the very first (inorganic) point-contact transistor (www.pbs.org/transistor/science/tabpages/BR12161647a.gif) (24).
15. H. Sirringhaus et al., Appl. Phys. Lett. 77, 406 (2000).
16. H. Sirringhaus, N. Tessler, R. H. Friend, Science 280, 1741 (1998).
17. Materials and methods are available as supporting material on Science Online.
18. H. Sirringhaus et al., Nature 401, 68S (1999).
19. H. Sirringhaus, N. Tessler, D. S. Thomas, P. J. Brown, R. H. Friend, in Advances in Solid State Physics, vol. 39, B. Kramer, Ed. (Vieweg, Braunschweig, Germany, 1999), pp. 101-110.
20. T. v. Woudenbergh, P. W. M. Blom, M. C. J. M. Vissenberg, J. N. Huiberts, Appl. Phys. Lett. 79, 1697 (2001).
21. L. Buergi, H. Sirringhaus, R. H. Friend, Appl. Phys. Lett. 80, 2913 (2002).
22. N. Stutzmann, T. A. Tervoort, C. W. M. Bastiaansen, K. Feldman, P. Smith, Adv. Mat. 12, 557 (2000).
23. N. Stutzmann et al., Adv. Func. Mater. 12, 105 (2002).
24. J. Bardeen, W. H. Brattain, Phys. Rev. 74, 230 (1948).
25. The authors thank R. J. Wilson, L. Bürgi, C. W. Sele, B. L. Thiel (University of Cambridge), and P. Smith, T. A. Tervoort, and the Polymer Technology group (ETH Zurich) for their invaluable help in this work, and the Dow Chemical Company for supplying the F8T2 polymer. N.S. has been financially supported by a Swiss National Science Foundation grant for young researchers.