Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 488-490

  Kolobov, A ^a   Oyanagi, H ^a   Usami, N ^b   Tokumitsu, S ^c   Hattori, T ^c   Yamasaki, S ^a   Tanaka, K ^d   Ohtake, S ^e   Shiraki, Y ^e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AVERAGE COMPOSITION; COSPUTTERING; CRYSTALLINE GE; HIGHER TEMPERATURES; LOCAL STRUCTURE; OUTER SHELLS; SI (100) SUBSTRATE;

BOND LENGTH; NANOCRYSTALS; RAMAN SCATTERING; SILICON; SILICON COMPOUNDS; X RAY ABSORPTION; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY;

GERMANIUM;

EID: 79956060588     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435076     Document Type: Article

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