Current transport mechanisms of schottky barrier and modified schottky barrier MOSFETs

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 307-310

  Tsui, Bing Yue ^a   Lu, Chi Pei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

DRIFT DIFFUSION; GATE VOLTAGE; MODIFIED SCHOTTKY BARRIER DEVICES;

MOSFET DEVICES;

EID: 39549121995     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430939     Document Type: Conference Paper

References (14)

1. J. P. Synder, C. R. Helms, and Y. Nishi, "Experimental investigation of a PtSi source and drain field emission transistor," Appl. Phys. Lett., vol. 67, p. 1420, 1995.
2. J. Kedzierski, P. Xuan, E. H. Anderson, J. Boker, T. J. King, C. Hu, "Complementary Silicide Source/Drain Thin Body MOSFETs for the 20 nm Gate Length Regime," in IEDM Tech. Dig., p.57, 2000.
3. X. Huang, W. C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y. K. Choi, K. Asano, V. Subramanian, T. J. King, J. Bokor, and C. Hu," Sub 50-nm FinFET: PMOS," in IEDM Tech. Dig., p.67, 1999.
4. C. Wang, J. P. Synder, and J. R. Tucker, "Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 74, p. 1174, 1999.
5. W. Saitoh, S. Yamagami, A. Itoh, and M. Asada, "35-nm metal gate p-type metal-oxide-semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate," Jpn. J. Appl. Phys., vol. 38, pp. 629-631, 1999.
6. J. Knoch and J. Appenzeller, "Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 81, pp. 3082-3084, Oct. 2002.
7. J. Kedzierski, P. Xuan, E. H. Anderson, J. Boker, T. J. King, and C. Hu, "Complementary suicide source/drain thin-body MOSFETs for the 20-nm gate length regime," IEDM Tech. Dig., pp. 57-60, 2000.
8. H. C. Lin, M. F. Wang, F. J. Ho, J. T. Liu, Y. Li, T. Y. Huang, and S. M. Sze, "Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel," in Proc. IEEE Conf. Nanotechnology (NANO), Washington, DC, Aug. 2002, pp. 205-208.
9. Bing-Yue Tsui and Chia-Pin Lin, "A novel 25 nm modified-Schottky- barrier FinFET with high performance," IEEE Electron Device Lett., vol.25, No.6, pp.430-432, 2004.
10. A. Kinoshita, Y. Tsuchiya, A. Yagishita*, K. Uchida and J. Koga, "Solution for High-Performance Schottky-Source/Drain MOSFETs: Schottky Barrier Height Engineering with Dopant Segregation Technique," in Proc. Symp. VLSI Technology, p.168, 2004
11. A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, and J. Koga, "Comprehensive study on Injection Velocity Enhancement in Dopant-Segregated Schottky Barrier MOSFETs," in IEDM Tech. Dig. pp.79-82, 2006.
12. Bing-Yue Tsui and Chia-Pin Lin, "Process and Characteristics of Modified-Schottky-Barrier (MSB) p-Channel FinFETs," IEEE Trans. on Electron Devices, vol.52, No.11, pp.2455-2462, 2005
13. S. M. Sze, Physics of Semiconductor Devices, 2 ed., John Wiley & Sons, 1981, pp.263-264.
14. S. M. Sze, Physics of Semiconductor Devices, 2 ed., John Wiley & Sons, 1981, p.292.