Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectrics

Materials Research Society Symposium Proceedings

Volumn 1017, Issue , 2007, Pages 133-138

  Yang, Weifeng ^a   Whang, Sungjin ^a   Lee, Sungjoo ^a   Zhu, Haichen ^a   Gu, Hanlu ^a   Cho, Byungjin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HIGH-K DIELECTRIC; MOSFET DEVICES; NANOWIRES; SCHOTTKY BARRIER DIODES;

HIGH- K GATE DIELECTRICS; HIGH-WORK-FUNCTION METAL; METAL SOURCE AND DRAIN; P-TYPE BEHAVIORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SUBTHRESHOLD SLOPE; VAPOR LIQUID SOLIDS;

GATE DIELECTRICS;

EID: 43249092454     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1017-dd14-05     Document Type: Conference Paper

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