Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire

Nanotechnology

Volumn 19, Issue 22, 2008, Pages

  Yang, W F ^a   Lee, S J ^a   Liang, G C ^a   Whang, S J ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GATE DIELECTRICS; MOS DEVICES; MOSFET DEVICES; SILICON COMPOUNDS; SINGLE CRYSTALS;

GATE OXIDE THICKNESS; NW MOSFET; SCHOTTKY BARRIER HEIGHT (SBH);

NANOWIRES;

GERMANIUM; METAL OXIDE; NANOWIRE; PALLADIUM; PHOSPHORUS; SILICON; TANTALUM;

ARTICLE; CRYSTAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRICITY; ENERGY DISPERSION SPECTROSCOPY; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; NONHUMAN; PRIORITY JOURNAL; SCHOTTKY BARRIER HEIGHT; SEMICONDUCTOR; SENSITIVITY ANALYSIS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 43249101603     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/22/225203     Document Type: Article

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