RLC matched GaN HEMT power amplifier with 2 GHz bandwidth

2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Volumn , Issue , 2008, Pages

  Krishnamurthy, K ^a   Wang, D ^a   Landberg, B ^a   Martin, J ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

Broadband amplifiers; Gallium nitride (gan); High electron mobility transistors (hemts); Power amplifiers

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; NITRIDES; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; TELECOMMUNICATION SYSTEMS; TRANSISTORS;

APPLICATIONS.; CW MEASUREMENTS; CW POWERS; DIGITAL CELLULAR; DRAIN EFFICIENCIES; DRAIN VOLTAGES; DUTY CYCLES; GAN HEMT; HANDHELD RADIOS; HIGH POWER PACKAGES; HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS); INTEGRATED PASSIVES; MATCHING CIRCUITRIES; OUTPUT POWERS; PULSE WIDTHS; SIC DEVICES; WIDE BANDS;

BROADBAND AMPLIFIERS;

EID: 57849153049     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2008.42     Document Type: Conference Paper

References (18)

1. W. Koenig et al., "A multiband front end for a medium range base station - an important step towards SDR", 3rd Karlsruhe Workshop on Software Radios, WSR'04, March 17/18, 2004.
2. R. J. Trew et al., "Wide bandgap semiconductor electronic devices for high frequency applications", 1996 IEEE Gallium Arsenide Integrated Circuit Symp.Dig., pp. 6-9, Nov. 1996.
3. Y. Ayasli et al., "2-20- GHz GaAs traveling-wave power amplifier," IEEE Trans MTT., vol. 32, pp. 290-295, Mar. 1984.
4. B.M. Green et al., "High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates", IEEE Trans. on MTT, vol. 49, no. 12, pp. 2486-2493, Dec. 2001.
5. C. Xie et al., "Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications", 2007 IEEE Military Communications Conf. Dig., pp. 1-4,29-31 Oct. 2007.
6. K.B. Niclas, "Multi-Octave Performance of Single-Ended Microwave Solid-State Amplifiers", IEEE Trans. on MTT, vol. 32, no. 8, pp. 896-908, Aug 1984.
7. K.W. Kobayashi et al., "A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz", 2007 IEEE MTT-S IMS.Dig., pp. 619-622, 3-8 June 2007.
8. A.K. Ezzeddine et al., "Ultra-Broadband GaAs HIFET MMIC PA", 2006 IEEE MTT-S IMS Dig., pp. 1320-1323, June 2006.
9. K.W. Kobayashi et al., "1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz", 2007 IEEE RFIC Symp. Dig., pp. 585-588, 3-5 June 2007.
10. K. Krishnamurthy et al., "Broad-band microwave power amplifiers in GaN technology", 2000 GaAsIC Symp. Dig., pp. 33-36, 5-8 Nov 2000.
11. A. Sayed et al., "Two-stage ultrawide-band 5-W power amplifier using SiC MESFET", IEEE Trans, on MTT, vol. 53, no. 7, pp. 2441-2449, July 2005.
12. A. Sayed et al., "5W highly linear GaN power amplifier with 3.4 GHz bandwidth", 2007 European Microwave Integrated Circuits Conf. Proc., pp. 631-634, 9-12 Oct. 2007.
13. P. Ikalainen, "An RLC matching network and application in 1-20 GHz monolithic amplifier," 1989 IEEE MTT-S IMS., pp. 1115-1118, 1989.
14. T. Arell et al., "A unique MMIC broadband power amplifier approach", IEEE Journal of Solid-State Circuits, vol. 28, no. 10, pp. 1005-1010, Oct. 1993.
15. Y.-F. Wu et al., "3-9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching", IEEE Microwave and Guided Wave Lett., vol. 9, no. 8, pp. 314-316, Aug. 1999.
16. J.J. Xu et al., "A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier", IEEE Trans, on MTT, vol. 48, no. 12, pp. 2573-2578, Dec. 2000.
17. R. Vetury et al., "High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications," 2005 IEEE MTT-S IMS. Dig., pp. 487-490, June 2005.
18. J.P. Conlon et al., "GaN Wide Band Power Integrated Circuits", 2006 IEEE CSICS. Dig., pp. 85-88, Nov. 2006.