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Volumn , Issue , 2007, Pages
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Development of GaN HEMT based high power high efficiency distributed power amplifier for military applications
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFIERS (ELECTRONIC);
DC GENERATORS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MICROWAVE CIRCUITS;
MILITARY APPLICATIONS;
MILITARY COMMUNICATIONS;
MILITARY ENGINEERING;
MILITARY OPERATIONS;
POWER AMPLIFIERS;
POWER TRANSMISSION;
SEMICONDUCTING GALLIUM;
TELECOMMUNICATION SYSTEMS;
BROADBAND POWER AMPLIFIERS;
DISTRIBUTED POWER;
DISTRIBUTED POWER AMPLIFIERS;
GAN HEMT;
HIGH EFFICIENCY;
HIGH POWERS;
MAXIMUM POWER OUTPUT;
POWER-ADDED EFFICIENCY (PAE);
ROCKWELL COLLINS (CO);
WIDE-BAND-GAP (WBG);
BROADBAND AMPLIFIERS;
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EID: 47949121389
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/MILCOM.2007.4455083 Document Type: Conference Paper |
Times cited : (12)
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References (7)
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