A 2 watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 619-622

  Kobayashi, Kevin W ^a   Chen, Yaochung ^b   Smorchkova, Ioulia ^b   Tsai, Roger ^b   Wojtowicz, Mike ^b   Oki, Aaron ^b  

^a Sirenza Microdevices   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Dynamic range; GaN HEMT; Low noise amplifier (LNA); Power amplifier (PA)

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; UHF DEVICES;

DYNAMIC RANGE; MMIC AMPLIFIERS; ULTRA HIGH LINEARITY;

POWER AMPLIFIERS;

EID: 34748896682     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.379977     Document Type: Conference Paper

References (5)

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