1-Watt conventional and cascoded GaN-SiC darlington MMIC amplifiers to 18 GHz

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 585-588

  Kobayashi, Kevin W ^a   Chen, YaoChung ^b   Smorchkova, Ioulia ^b   Tsai, Roger ^b   Wojtowiez, Mike ^b   Oki, Aaron ^b  

^a Sirenza Microdevices   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Broadband; Darlington; FT doubler; GaN HEMT; Microwave; Multi decade; Power Amplifier (PA)

Indexed keywords

BANDWIDTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON CARBIDE;

CASCODED-DARLINGTON FEEDBACK DESIGNS; FT-DOUBLER; GAN HEMT;

POWER AMPLIFIERS;

EID: 34748888851     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380952     Document Type: Conference Paper

References (10)

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7. Sirenza Microdevices, " 50 - 850 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier," SBB1089 datasheet, www.sirenza.com.
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