GaN wide band power integrated circuits

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 85-88

  Conlon, J P ^a   Zhang, N ^a   Poulton, M J ^a   Shealy, J B ^a   Vetury, R ^a   Green, D S ^a   Brown, J D ^a   Gibb, S ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

Gallium Nitride (GaN); High electron mobility transistor (HEMT); Linearity; Power amplifiers; Software defined radio; Wide band; WiMAX

Indexed keywords

BANDWIDTH; ELECTRIC CONDUCTIVITY; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; LINEARIZATION; NETWORKS (CIRCUITS); POWER AMPLIFIERS; POWER INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; TELECOMMUNICATION SYSTEMS;

BROAD BANDS; CASCODE AMPLIFIERS; COMMERCIAL APPLICATIONS; COMPOUND SEMICONDUCTOR (CS); DOUBLER; FLAT GAIN; GALLIUM NITRIDE (GAN); GAN HEMT; GHZ BAND; HIGH LINEARITY; HIGH POWER DENSITY (HPD); OUTPUT POWERS; TWO TYPES; WIDE BANDS; WIDE BANDWIDTH;

AMPLIFIERS (ELECTRONIC);

EID: 34748904362     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319885     Document Type: Conference Paper

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