SCOPUS 정보 검색 플랫폼

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1320-1323

Ultra-broadband GaAs HIFET MMIC PA

a AMCOM Communications Inc (United States)

Author keywords

High voltage techniques; Microwave devices; Microwave power FET amplifiers; MMIC power amplifiers; Power amplifiers; Power FETs; Power semiconductor devices

Indexed keywords

BANDWIDTH; BROADBAND NETWORKS; ELECTRIC IMPEDANCE; FREQUENCY BANDS; MICROWAVE DEVICES; POWER AMPLIFIERS;

HIGH VOLTAGE TECHNIQUES; MICROWAVE POWER FET AMPLIFIERS; MMIC POWER AMPLIFIERS; POWER FETS; POWER SEMICONDUCTOR DEVICES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 34250359509 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/MWSYM.2006.249474 Document Type: Conference Paper

Times cited : (47)

References (7)

1
- 0022203567
- High-Voltage FET amplifiers for Satellite and Phased-Array applications
- June
- A. Ezzeddine. H.-L. Hung and H. C. Huang, "High-Voltage FET amplifiers for Satellite and Phased-Array applications," 1985 IEEE MTT-S Int. Microwave Symposium Digest, pp. 336-339, June 1985.
- (1985) 1985 IEEE MTT-S Int. Microwave Symposium Digest , pp. 336-339
- Ezzeddine, A.¹ Hung, H.-L.² Huang, H.C.³

2
- 0024945591
- Monolithic High-Voltage FET Power Amplifiers
- June
- K. E. Peterson, H.-L. Hung, F. R. Phelleps, T. F. Noble and H. C. Huang, "Monolithic High-Voltage FET Power Amplifiers." 1989 IEEE MTT-S Int. Microwave Symposium Dig., vol. 3, pp. 945-948, June 1989.
- (1989) 1989 IEEE MTT-S Int. Microwave Symposium Dig , vol.3 , pp. 945-948
- Peterson, K.E.¹ Hung, H.-L.² Phelleps, F.R.³ Noble, T.F.⁴ Huang, H.C.⁵

3
- 4444372102
- A High Power Density 26V GaAs pHEMT Technology
- June
- B. Green, E. Lan, P. Li, O. Hartin, C. Gaw, M. CdeBaca, E. Johnson, W. Knappenberger, J. Kim, L. S. Klingbeil, P. Fisher, M. Miller, C. Weitzel, "A High Power Density 26V GaAs pHEMT Technology," 2004 IEEE MTT-S Int. Microwave Symposium Dig., vol. 2, pp. 817-820, June 2004.
- (2004) 2004 IEEE MTT-S Int. Microwave Symposium Dig , vol.2 , pp. 817-820
- Green, B.¹ Lan, E.² Li, P.³ Hartin, O.⁴ Gaw, C.⁵ CdeBaca, M.⁶ Johnson, E.⁷ Knappenberger, W.⁸ Kim, J.⁹ Klingbeil, L.S.¹⁰ Fisher, P.¹¹ Miller, M.¹² Weitzel, C.¹³

4
- 4444368737
- A High Gain L-Band GaAs FET Technology for 28V
- June
- K. Inoue, M. Nagahara, N. Ui, H. Haematsu, S. Sano, J. Fukaya, "A High Gain L-Band GaAs FET Technology for 28V," 2004 IEEE MTT-S Int. Microwave Symposium Dig., vol. 2, pp. 821-824, June 2004.
- (2004) 2004 IEEE MTT-S Int. Microwave Symposium Dig , vol.2 , pp. 821-824
- Inoue, K.¹ Nagahara, M.² Ui, N.³ Haematsu, H.⁴ Sano, S.⁵ Fukaya, J.⁶

5
- 4544260561
- 50 watt MMIC Power Amplifier Design for 2GHz Applications
- June
- M. Akkul. M. Sarfraz, J. Mayock. W. Bosch "50 watt MMIC Power Amplifier Design for 2GHz Applications," 2004 IEEE MTT-S Int. Microwave Symposium Dig., vol. 3, pp. 1355-1358, June 2004.
- (2004) 2004 IEEE MTT-S Int. Microwave Symposium Dig , vol.3 , pp. 1355-1358
- Akkul, M.¹ Sarfraz, M.² Mayock, J.³ Bosch, W.⁴

6
- 4544225789
- Ka-Band MMIC Power Amplifier in GaN HFET Technology
- June
- M. Micovic, A. Kurdoghlian, H. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, D. Wong, J. Duval, M. Hu, M. Delaney, D. Chow, "Ka-Band MMIC Power Amplifier in GaN HFET Technology." 2004 IEEE MTT-S Int. Microwave Symposium Dig., vol. 3, pp. 1653-1656, June 2004.
- (2004) 2004 IEEE MTT-S Int. Microwave Symposium Dig , vol.3 , pp. 1653-1656
- Micovic, M.¹ Kurdoghlian, A.² Moyer, H.³ Hashimoto, P.⁴ Schmitz, A.⁵ Milosavljevic, I.⁶ Wong, D.⁷ Duval, J.⁸ Hu, M.⁹ Delaney, M.¹⁰ Chow, D.¹¹

7
- 0042090274
- The High-Voltage/High Power FET (HiVP)
- June
- A. K. Ezzeddine and H. C. Huang, "The High-Voltage/High Power FET (HiVP)," 2003 IEEE RFIC Symposium Digest, pp. 215-218, June 2003.
- (2003) 2003 IEEE RFIC Symposium Digest , pp. 215-218
- Ezzeddine, A.K.¹ Huang, H.C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.