Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 12, 2008, Pages 2685-2691

  Malmkvist, Mikael ^a   Lefebvre, Eric ^b   Borg, Malin ^c   Desplanque, Ludovic ^d   Wallart, Xavier ^d   Dambrine, Gilles ^d   Bollaert, Sylvain ^d   Grahn, Jan ^e  

^a Ericsson Microwave Systems AB   (Sweden)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^c SAAB AB   (Sweden)

^d INSTITUT D ELECTRONIQUE   (France)

^e CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Gate leakage current; HEMT; Heterostructure; InAs AlSb; Noise; Small signal model

Indexed keywords

CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; TRANSISTORS;

GATE-LEAKAGE CURRENT; HEMT; HETEROSTRUCTURE; INAS/ALSB; NOISE; SMALL-SIGNAL MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 57849100569     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.2006798     Document Type: Conference Paper

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