Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1996, Pages 1317-1320

  Reuter, R ^a   Agethen, M ^a   Auer, U ^a   van Waasen, S ^a   Peters, D ^a   Brockerhoff, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; IMPACT IONIZATION; SMALL SIGNAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 0029703749     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)