Microwave noise characteristics of AISb/InAs HEMTs

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1092-1093

  Kruppa, W ^a   Boos, J B ^a   Park, D ^a   Bennett, B R ^a   Bass, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Field effect transistors; Indium compounds; Noise

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SHOT NOISE;

NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031554384     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970691     Document Type: Article

References (4)

1. BOLOGNESI, C.R., CAINE, E.J., and KROEMER, H.: 'Improved charge control and frequency performance in AlSb/InAs-based heterostructure field-effect transistors', IEEE Electron Device Lett., 1994, 15, pp. 16-18
2. BOOS, J.B., KRUPPA, W., PARK, D., MOLNAR, B., and BENNETT, B.R.: 'AlSb/InAs HEMTs with high transconductance and negligible kink effect'. Electron. Lett., 1996, 32, pp. 688-689
3. STRID, E.W.: 'Measurement of losses in noise-matching networks', IEEE Trans., 1981, MTT-29, pp. 247-252
4. DANNEVILLE, F., DAMBRINE, G., HAPPY, H., TADYSZAK, P., and CAPPY, A.: 'Influence of the gate leakage current on the noise performance of MESFETs and MODFETs', Solid-State Electron., 1995, 38, pp. 1081-1087