Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 775-781

  Borg, Malin ^a   Lefebvre, Eric ^a   Malmkvist, Mikael ^a   Desplanque, Ludovic ^b   Wallart, Xavier ^b   Roelens, Yannick ^b   Dambrine, Gilles ^b   Cappy, Alain ^b   Bollaert, Sylvain ^b   Grahn, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Antimonide; Gate length; HEMT; High gain; InAs AlSb; Low power

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POWER UTILIZATION; GAIN CONTROL; GATE DIELECTRICS; INDIUM ARSENIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

ANTIMONIDE; GATE LENGTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41449106907     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.12.002     Document Type: Article

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