MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 95-98

  Kadir, Abdul ^a   Gokhale, M R ^a   Bhattacharya, Arnab ^a   Pretorius, Angelika ^b   Rosenauer, Andreas ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

A1. Transmission electron microscopy; A3. Quantum wells; B1. Indium nitride

Indexed keywords

CRYSTAL GROWTH; ELECTRON MICROSCOPES; GALLIUM NITRIDE; GROWTH (MATERIALS); INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL METALS; TRANSMISSION ELECTRON MICROSCOPY; WELLS;

A1. TRANSMISSION ELECTRON MICROSCOPY; A3. QUANTUM WELLS; B1. INDIUM NITRIDE; HIGHER TEMPERATURES; IN SEGREGATIONS; METAL ORGANIC; MOVPE GROWTHS; QUANTUM SIZE EFFECTS; ROUGH INTERFACES; TRANSMISSION ELECTRON MICROSCOPY MEASUREMENTS; X-RAY DIFFRACTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 57649208755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.056     Document Type: Article

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