Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4405-4407

  Kim, Je Won ^a   Lee, Kyu Han ^a   Hong, Sangsu ^a  

^a Samsung Electro Mechanics   (South Korea)

Author keywords

GaN; InN; Nano structure; Quantum well

Indexed keywords

ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

FAR FIELD OPTICAL TECHNIQUES; LASER SCANNING MICROSCOPY; OPTICAL CHARACTERISTICS; TWO PHOTON EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847068400     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.180     Document Type: Article

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