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Volumn 288, Issue 2, 2006, Pages 283-288
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Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures
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Author keywords
A1. Photoluminescence; A1. Quantum well; A1. X ray diffraction; A3. RF MBE; B2. In rich InxGa1 xN; B2. InN
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Indexed keywords
CRYSTAL GROWTH;
FABRICATION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
X RAY DIFFRACTION ANALYSIS;
CRYSTALLINE QUALITY;
GROWTH TEMPLATES;
NITRIDATION;
INDIUM ALLOYS;
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EID: 32644441132
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.008 Document Type: Article |
Times cited : (10)
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References (12)
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