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Volumn 288, Issue 2, 2006, Pages 283-288

Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures

Author keywords

A1. Photoluminescence; A1. Quantum well; A1. X ray diffraction; A3. RF MBE; B2. In rich InxGa1 xN; B2. InN

Indexed keywords

CRYSTAL GROWTH; FABRICATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

EID: 32644441132     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.008     Document Type: Article
Times cited : (10)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.