Characterization of BCN films synthesized by radiofrequency plasma enhanced chemical vapor deposition

Journal of Physics and Chemistry of Solids

Volumn 70, Issue 1, 2009, Pages 20-25

  Abdul Mannan, Md ^a   Nagano, Masamitsu ^a   Kida, Tetsuya ^a   Hirao, Norie ^b   Baba, Yuji ^b  

^a SAGA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

A. Thin films; B. Plasma deposition; C. Infrared spectroscopy; C. Photoelectron spectroscopy; C. XEXAFS

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; BORON; BORON COMPOUNDS; CARBON NITRIDE; CRYSTAL ATOMIC STRUCTURE; ELECTRON SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; SPECTRUM ANALYSIS; THIN FILMS; VAPORS;

A. THIN FILMS; B. PLASMA DEPOSITION; C. INFRARED SPECTROSCOPY; C. PHOTOELECTRON SPECTROSCOPY; C. XEXAFS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57649171528     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.08.013     Document Type: Article

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