Performance of thin 4H-SiC UV avalanche photodiodes

IEE Proceedings: Optoelectronics

Volumn 150, Issue 2, 2003, Pages 187-190

  Ng, B K ^a   David, J P R ^a   Tozer, R C ^a   Rees, G J ^a   Yan, F ^b   Qin, C ^b   Zhao, J H ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC POTENTIAL; ENERGY GAP; GAIN MEASUREMENT; IONIZATION; MATHEMATICAL MODELS; QUANTUM EFFICIENCY; SIGNAL RECEIVERS; SIGNAL TO NOISE RATIO; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; ULTRAVIOLET DETECTORS;

AVALANCHE PHOTODIODES; HOLE MULTIPLICATION; PHOTOMULTIPLICATION MEASUREMENTS; PHOTORECEIVER SYSTEMS;

PHOTODIODES;

EID: 0038607032     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030382     Document Type: Article

References (11)

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