4H-SiC UV photo detectors with large area and very high specific detectivity

IEEE Journal of Quantum Electronics

Volumn 40, Issue 9, 2004, Pages 1315-1320

  Yan, Feng ^a   Xin, Xiaobin ^b   Aslam, Shahid ^a   Zhao, Yuegang ^c   Franz, David ^a   Zhao, Jian H ^b   Weiner, Maurice ^d  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c Keithley Instruments Inc   (United States)

^d UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; PHOTODIODES; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SPECTRUM ANALYSIS;

PHOTORESPONSE SPECTRA; SCHOTTKY PHOTODIODES; SPECIFIC DETECTIVITY;

ULTRAVIOLET DETECTORS;

EID: 4544229845     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.833196     Document Type: Article

References (21)

1. P. W. Kruse, "The photo detection process," in Optical and Infrared Detectors. New York: Springer-Verlag, 1977, pp. 5-69.
2. R. E. Huffman, "Atmospheric emission and absorption of ultraviolet radiation," in Handbook of Geophysics and the Space Environment, A. S. Jursa, Ed: Air Force Geophysics Laboratory, 1985, pp. 22.1-22.7.
3. A. R. Powell and L. B. Rowland, "SiC materials-progress, status, and potential roadblocks," Proc. IEEE, vol. 90, pp. 942-955, June 2002.
4. M. Razeghi, "Short-wavelength solar blind detectors-status, prospects, and markets," Proc. IEEE, vol. 90, pp. 1006-1014, June 2002.
5. P. G. Neudeck, "Electrical impact of SiC structural crystal defects on high field devices," Material Science Forum., vol. 338-342, pp. 1161-1166, Oct. 2000.
6. A. L. Barry, B. Lehmann, D. Fritsch, and D. Braunig, "Energy dependence of electron damage and displacement threshold energy in 6H-SiC," IEEE Trans. Nucl. Sci., vol. 38, pp. 1111-1115, June 1991.
7. J. A. Edmond, H. Kong, and C. H. Carter Jr., "Blue LEDs, UV photodiodes and high temperature rectifier in 6H-SiC," Phys. B: Condensed Matter, vol. 185, pp. 453-460, Apr. 1993.
8. F. Yan, C. Qin, J. H. Zhao, M. Weiner, B. K. Ng, J. P. R. David, and R. C. Tozer, "Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 degrees positive bevel," Electron. Lett., vol. 38, pp. 335-336, July 2002.
9. X. Guo, A. Beck, B. Yang, and J. C. Campbell, "Low dark current 4H-SiC avalanche photodiodes," Electron. Lett., vol. 39, pp. 1673-1674, Nov. 2003.
10. E. H. Rhoderick and R. H. Williams, Metal Semiconductor Contact, 2nd ed. Oxford: Clarendon Press, 1978, pp. 46-47.
11. A. Itoh and H. Matsunami, "Analysis of Schottky barrier heights of metal/SiC contacts and its possible application to high-voltage rectifying devices," Phys. Stat. Sol. A, vol. 162, pp. 389-408, July 1997.
12. R. T. Tung, "Electron transport at metal-semiconductor interfaces: General theory," Phys. Rev. B, vol. 45, pp. 13509-13523, June 1992.
13. F. Roccaforte, F. L. Via, V. Raineri, R. Pierobon, and E. Zanoni, "Richardson's constant in inhomogeneous silicon carbide Schottky contacts," J. Appl. Phys., vol. 93, pp. 9137-9144, June 2003.
14. S. Donati, PhotoDetectors-Devices, Circuits, and Applications. Englewood Cliffs, NJ: Prentice-Hall, 2000, pp. 1-46.
15. E. D. Palik, Optical Constants of Materials. San Diego, CA: Academic, 1985, pp. 333-341.
16. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995, pp. 583-630.
17. The Book of Photon Tools, Oriel Instruments, Stratford, CT, 2003, pp. 6.1-6.140.
18. S. Aslam, R. E. Vest, F. Yan, D. Franz, and Y. Zhao, "External quantum efficiency of Pt/n-Gan Schottky diodes in the spectral range 5-500 nm," Nucl. Instrum. Meth. Phys. Res. A, submitted for publication.
19. V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. A. Khan, N. Pala, M. Shur, and R. Gaska, "SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors," Appl. Phys. Lett., vol. 77, pp. 863-865, 2000.
20. J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, "Inhomogenous spatial distribution of reverse bias leakage in GaN Schottky diodes," Appl. Phys. Lett., vol. 78, pp. 1685-1687, 2001.
21. S. Verghese, K. A. Mclntosh, R. J. Molnar, L. J. Mahoney, R. L. Aggarwal, M. W. Geis, K. M. Molvar, E. K. Duerr, and I. Melngailis, "GaN photodiodes operating in linear gain mode and Geiger mode," IEEE Trans. Electron. Devices, vol. 48, pp. 502-511, Mar. 2001.