Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 586-591

  Park, S D ^a   Lee, Y J ^a   Cho, N G ^a   Kim, S G ^b   Choe, H H ^b   Hong, M P ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Additive gas; Selective etching; Tungsten

Indexed keywords

ADDITIVES; CHEMICAL BONDS; CHLORINE; GASES; INDUCTIVELY COUPLED PLASMA; MELTING; METALLIC FILMS; PLASMA ETCHING; POLYSILICON; PROFILOMETRY; VAPOR PRESSURE; VAPORIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ADDITIVE GASES; SELECTIVE ETCHING;

TUNGSTEN;

EID: 1342281271     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.06.002     Document Type: Conference Paper

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