Influence of the structure of a-SiOxNy thin films on their electrical properties

Plasma Processes and Polymers

Volumn 4, Issue SUPPL.1, 2007, Pages

  Rebib, Farida ^a   Tomasella, Eric ^a   Aida, Salah ^b   Dubois, Marc ^a   Bêche, Eric ^c   Cellier, Joel ^a   Jacquet, Michel ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b Universite Mentouri Constantine   (Algeria)

^c CNRS   (France)

Author keywords

Dielectric properties; SiOxNy; Structure; Thin films

Indexed keywords

ELECTRICAL PROPERTY; FILM COMPOSITION; FTIR; I-V MEASUREMENTS; NITROGEN ATMOSPHERES; OXYGEN CONTENT; RF-SPUTTERING; SILICON DANGLING BOND; SILICON TARGETS; SIOXNY; STRUCTURAL DEFECT; STRUCTURE; TYPE STRUCTURES; XPS;

AMORPHOUS FILMS; ARGON; CERAMIC CAPACITORS; DANGLING BONDS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDE FILMS; OXYGEN; PERMITTIVITY; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; THIN FILMS;

AMORPHOUS SILICON;

EID: 57249109328     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.200730403     Document Type: Conference Paper

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