Electrical behaviour of SiO x N y thin films and correlation with structural defects

Applied Surface Science

Volumn 252, Issue 15, 2006, Pages 5607-5610

  Rebib, F ^a   Tomasella, E ^a   Aida, S ^b   Dubois, M ^a   Cellier, J ^a   Jacquet, M ^a  

^a CNRS   (France)

^b Universite Mentouri Constantine   (Algeria)

Author keywords

Electrical properties; Silicon oxynitride; Sputtering; Structural defects

Indexed keywords

CORRELATION METHODS; DEFECTS; OHMIC CONTACTS; PARAMAGNETIC RESONANCE; THIN FILMS;

ELECTRICAL PROPERTIES; SILICON OXYNITRIDE; STRUCTURAL DEFECTS;

SILICON COMPOUNDS;

EID: 33744511133     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.129     Document Type: Article

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