Structural properties of ultrathin amorphous silicon oxynitride layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3570-3577

  El Oyoun, Hussein Mohamed Abu ^a,b   Inokuma, Takao ^a   Kurata, Yoshihiro ^a   Hasegawa, Seiichi ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b Assiut University   (Egypt)

Author keywords

Bonding properties; C V characteristics; Dangling bonds; Plasma nitridation; Silicon oxynitride; Thermal oxidation

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; COMPOSITION; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITRIDING; THERMOOXIDATION; THICKNESS MEASUREMENT; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING PROPERTIES; DANGLING BONDS; ITRATHIN AMORPHOUS SILICON OXYNITRIDE LAYERS; PLASMA NITRIDATION; STRUCTURAL CHANGE; STRUCTURAL PROPERTIES;

SILICON COMPOUNDS;

EID: 0041738176     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3570     Document Type: Article

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