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Volumn 1070, Issue , 2008, Pages 177-183
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Optimization of stressor layers created by ClusterCarbon™ implantation
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
LEAKAGE CURRENTS;
SILICON;
SILICON CARBIDE;
TENSILE STRAIN;
X RAY DIFFRACTION ANALYSIS;
DEVICE PERFORMANCE;
END-OF-RANGE DEFECTS;
ENHANCED MOBILITY;
HIGH-RESOLUTION X-RAY DIFFRACTION;
NMOS TRANSISTORS;
PRE-AMORPHIZING IMPLANTS;
SELF-AMORPHIZATION;
SOLID PHASE EPITAXIAL REGROWTH;
SILICON COMPOUNDS;
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EID: 62949200388
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-1070-e04-08 Document Type: Conference Paper |
Times cited : (1)
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References (11)
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