Nanowire field-effect transistor with Bi1.5 Zn1.0 Nb1.5O7 dielectric

Applied Physics Letters

Volumn 93, Issue 21, 2008, Pages

  Fu, Wangyang ^a   Xu, Zhi ^a   Liu, Kaihui ^a   Wang, Wenlong ^a   Bai, Xuedong ^a   Wang, Enge ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARRIER MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); NANOWIRES; NIOBIUM; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; TRANSISTORS; ZINC; ZINC OXIDE;

FLEXIBLE ELECTRONICS; GATE VOLTAGES; HIGH CARRIER MOBILITIES; NANOWIRE TRANSISTORS; PROCESSING TECHNIQUES; PULSED LASERS; SUBTHRESHOLD SWINGS; ZNO NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 57049114330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3037219     Document Type: Article

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