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Volumn 516, Issue 5, 2008, Pages 580-583
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Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition
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Author keywords
Doping; Electrical properties; Hot wire CVD; Microcrystalline; Nanocrystalline; Silicon
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
HALL EFFECT;
MICROCRYSTALLINE SILICON;
NANOCRYSTALLINE MATERIALS;
DOPANT ATOMS;
DOPING EFFICIENCY;
HOT-WIRE CVD;
THIN FILMS;
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EID: 36749043131
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2007.06.035 Document Type: Article |
Times cited : (13)
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References (16)
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