Highly conductive Boron doped microcrystalline Si films deposited by hot wire cell method and its application to solar cells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3328-3332

  Miyajima, Shinsuke ^a   Kim, Mingyu ^a   Ide, Yoshinori ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron doped microcrystalline silicon; Hot wire cell method; Solar cell

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; SEMICONDUCTOR DOPING; SILANES; SOLAR CELLS; THICKNESS MEASUREMENT;

HOT WIRE CELL METHOD; MICROCRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 0042882797     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3328     Document Type: Article

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