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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 147-150
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Deposition and properties of microcrystalline silicon from chlorosilane precursor gases
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE MATERIALS;
DEPOSITION;
FERMI LEVEL;
HIGH PRESSURE EFFECTS;
MICROSTRUCTURE;
RAMAN SCATTERING;
SOLAR CELLS;
COPLANAR CONFIGURATION;
FILM DEPOSITION;
PRECURSORS;
RAMAN MEASUREMENTS;
SILICON;
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EID: 2942624030
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.02.041 Document Type: Conference Paper |
Times cited : (5)
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References (7)
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