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Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

(5) Kanjilal, A a Rebohle, L a Voelskow, M a Skorupa, W a Helm, M a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLYSIS; ERBIUM; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; IONS; LIGHT EMISSION; LUMINESCENCE; NANOCRYSTALS; POINT DEFECTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

ANNEALED SAMPLES; ANNEALING CYCLES; ENERGY MIGRATIONS; ER LUMINESCENCES; ER3+ IONS; EXCITATION WAVELENGTHS; FOURIER-TRANSFORM; INFRARED PHOTOLUMINESCENCES; PEAK INTENSITIES; PL BANDS; PL INTENSITIES; PL MEASUREMENTS; RATE EQUATIONS; SEQUENTIAL IMPLANTATIONS; SI NANOCRYSTALS; SPECTRAL ANALYSES; SUBSEQUENT ANNEALING; TIME-RESOLVED; TYPE II; VISIBLE RANGES;

SILICON;

EID: 57049085158 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3021414 Document Type: Article

Times cited : (23)

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