Comparison of functionalized III-V semiconductor response for nitric oxide

Sensor Letters

Volumn 6, Issue 4, 2008, Pages 627-634

  Garcia, Michael A ^a   Losurdo, M ^b   Wolter, S D ^a   Lampert, W V ^c   Bonaventura, J ^d   Bruno, G ^b   Yi, C ^a   Brown, A S ^a  

^a Duke University   (United States)

^b CNR   (Italy)

^c U S ARMY RESEARCH OFFICE   (United States)

^d DUKE UNIVERSITY MEDICAL CENTER   (United States)

Author keywords

Chemical sensor; Functionalized; GaN; InAs; InP; Nitric oxide

Indexed keywords

CHEMICAL SENSORS; ELECTRIC CONDUCTIVITY; FUNCTIONAL GROUPS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM ARSENIDE; NITRIC OXIDE; OXIDES; PHOTOELECTRON SPECTROSCOPY; PORPHYRINS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SENSORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN/GAN; ANALYTE; ENVIRONMENTAL FIELDS; FUNCTIONALIZATION; FUNCTIONALIZED; GAN; GASEOUS ENVIRONMENTS; INAS; INP; MATERIAL SYSTEMS; MATERIALS SYSTEMS; SEMI-CONDUCTORS; SENSING MODALITIES; SENSOR RESEARCHES; SOLID STATE SENSORS; SURFACE ACCUMULATIONS; SURFACE POLARIZATION CHARGES; TRANSDUCTION MECHANISMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

SEMICONDUCTOR MATERIALS;

EID: 56849114539     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2008.448     Document Type: Conference Paper

References (57)

1. M. Feelisch and J. S. Stamler, Methods in Nitric Oxide Research, John Wiley & Sons Inc., New York (1996).
2. J. Lancaster, Nitric Oxide: Principles and Actions, Academic Press, Inc., San Diego (1996).
3. B. Drafts, Sensors-Petersborough 14, 72 (1997).
4. M. Freed, M. Kruger, K. Poolla, and C. Spanos, Real Time In-Situ Data Acquisition Using Autonomous On-Wafer Sensor Arrays, Tokyo, Japan (2000), p. 94.
5. H. Lu, P. Sandvik, A. Vertiatichikh, J. Tucker, and A. Elasser, J. Appl. Phys. 99, 114510 (2006).
6. S. D. Medico, T. Behyattou, G. Guillot, M. Gendry, M. Oustric, T. Venet, J. Tardy, G. Hollinger, A. Chovet, and N. Mathieu, Semicond. Sci. Technol. 11, 576 (1996).
7. L. J. v. d. Pauw, Philips Res. Repts. 13, 1 (1958).
8. R. S. Popovic, Hall Effect Devices, 2nd edn., IOP, Bristol (2004).
9. C. Bergemann, J. Appl. Phys. 98, 043707-5 (2005).
10. G. R. Bell, T. S. Jones, and C. F. McConville, Appl. Phys. Lett. 71, 3688 (1997).
11. Y. Chen, J. C. Hermanson, and G. J. Lapeyre, Phys. Rev. B 39, 12682 (1989).
12. M. Noguchi, K. Hirakawa, and T. Ikoma, Phys. Rev. Lett. 66, 2243 (1991).
13. L. Ö. Olsson, C. B. M. Andersson, M. C. Hfikansson, J. Kanski, L. Ilver, and U. 0. Karlsson, Phys. Rev. Lett. 76, 3626 (1996).
14. Z. Sobiesierski, S. A. Clark, R. H. Williams, A. Tabata, T. Benyattou, G. Guillot, M. Gendry, G. Hollinger, and P. Viktorovitch, Appl. Phys. Lett. 58, 1863 (1991).
15. P. Viktorovitch, D. Gallet, M. Gendry, G. Hollinger, K. Schohe, T. Benyattou, A. Tabata, D. Regaud, and G. Guillot, Electronic Properties of InAs Surface Quantum Wells Grown on InP(100), Second International Conference on Indium Phosphide and Related Materials. (1990), pp. 148-152.
16. D. C. Tsui, Phys. Rev. B 4, 4438 (1971).
17. V. Battut, J. R Blanc, and C. Maleysson, Sens. Actuators, B 44, 503 (1997).
18. L. Talazac, F. Barbarin, C. Varenne, L. Mazet, S. Peltier, and C. Soulier, Sensors and Actuators B: Chemical 83, 149 (2002).
19. L. Talazac, J. Brunet, V. Battut, J. P. Blanc, A. Pauly, J. P. Germain, S. Peltier, and C. Soulier, Sensors and Actuators B: Chemical 76, 258 (2001).
20. K. Wierzbowska, A. Pauly, B. Adamowicz, and L. Bideux, Physica Status Solidi (a) 203, 2281 (2006).
21. J. P. Ibbetson, R T. Fini, K. D. Ness, S. R DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
22. S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 93, 10114 (2003).
23. X. Z. Dang, E. T. Yu, E. J. Piner, and B. T. McDermott, J. Appl. Phys. 90, 1357 (2001).
24. T. Wolkenstein, Electronic Processes on Semiconductor Surfaces During Chernisorption, Consultants Bureau, New York (1991), pp. 118-138.
25. M. Garcia, S. D. Wolter, T.-H. Kim, S. Choi, J. Baier, A. Brown, M. Losurdo, and G. Bruno, Appl. Phys. Lett. 88, 013506 (2006).
26. C. Rovira, K. Kunc, J. Hutter, P. Ballone, and M. Parrinello, J. Phys. Chem. A 101, 8914 (1997).
27. K. M. Kadish, K. M. Smith, and R. Guilard (eds.), Applications: Past, Present and Future, Academic Press, San Diego, CA (2000), Vol. 6.
28. D. G. Wu, D. Cahen, P. Graf, R. Naaman, A. Nitzan, and D. Shvarts, Chem. Eur J. 7, 1743 (2001).
29. A. Vilan and D. Cahen, Trends Biotechnol. 20, 22 (2002).
30. K. Gartsman, D. Cahen, A. Kadyshevitch, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, and A. Vilan, Chem. Phys. Lett. 283, 301 (1998).
31. G. Ashkenasy, D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Acc. Chem. Res. 35, 121 (2002).
32. D. Cahen, R. Naaman, and Z. Vager, Adv. Funct. Mater. 15, 1571 (2005).
33. M. Garcia, M. Losurdo, S. D. Wolter, T.-H. Kim, W. Lampert, J. Bonaventura, G. Bruno, M. M. Giangiregorio, and A. Brown, J. Vac. Sci. Technol. B 25, 1504 (2007).
34. G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. 83, 177 (2003).
35. F. A. Ponce, B. S. Krusor, J. S. Major, Jr., W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 67, 410 (1995).
36. V. M. Bermudez, Surf. Sci. 499, 124 (2002).
37. M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 77, 1339 (2000).
38. M. Losurdo, R Capezzuto, G. Bruno, A. Brown, T.-H. Kim, C. Yi, D. N. Zakharov, and Z. Liliental-Weber, Appl. Phys. Lett. 86, 0291920 (2005).
39. M. Losurdo, M. M. Giangregorio, G. Bruno, A. Brown, and T.-H. Kim, Appl. Phys. Lett. 85, 4034 (2004).
40. P. Ruterana, M. Albrecht, and J. Neugebauer, Nitride Semiconductors: Handbook on Materials and Devices, Ist edn., Wiley-VCH, Weinheim (2002).
41. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, San Diego, CA (1992).
42. J. Uhlrich, M. Garcia, S. D. Wolter, A. Brown, and T. F. Kuech, J Cryst. Growth 300, 204 (2007).
43. D. T. Clark, T. Fok, G. G. Roberts, and R. W. Sykes, Thin Solid Films 70, 261 (1980).
44. M. Procop, J. Electron Spectrosc. Relat. Phenom. 59, R1 (1992).
45. L. Y. Kupriyanov (ed.), Semiconductor Sensors in Physico-Chernical Studies, Elsevier, Amsterdam (1996), Vol. 4.
46. E. Comini, G. Faglia, and G. Sbervegheri, Sensors and Actuators B: Chemical 76, 270 (2001).
47. O. V. Krylov, Nonmetal Catalysis, Kimiia, Leningrad (1967).
48. M. Aronniemi, I Sainio, and J. Lahtinen, Surf. Sci. 578, 108 (2005).
49. J. Blomquist, U. Helgeson, L. C. Moberg, B. Folkesson, and R. Larsson, Inorg. Chim. Acta 69, 17 (1983).
50. M. Levinshtein, S. Rumyantsev, and M. S. Shur (eds.), Handbook Series on Semiconductor Parameters, World Scientific Publishing Co., River Edge (1996), Vol. 1.
51. H. C. Longuet-Higgins and J. N. Murrell, Proc. Phys. Soc. 68, 601 (1954).
52. Y. Nakato, K. Abe, and H. Tsubomura, Chem. Phys. Lett. 39, 358 (1976).
53. S. Nonose, S. Iwaoka, H. Tanaka, N. Okai, T. Shibakusa, and K. Fuke, Eur. Phys. J. D 24, 335 (2003).
54. J. I. Pankove and H. Schade, Appl. Phys. Lett. 25, 53 (1974).
55. K. Tagami, M. Tsukada, T. Matsumoto, and T. Kawai, Phys. Rev. B 67, 245324 (2003).
56. G. Nesher, A. Vilan, H. Cohen, D. Cahen, F. Amy, C. Chan, J. Hwang, and A. Kahn, J. Phys. Chem. B 110, 14363 (2006).
57. C. E. Cooper, Biochim. Biophys. Acta 1411, 290 (1999).