The characterization of etched GaAs surface with HCl or H3PO4 solutions

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 634-642

  Kang, Min Gu ^a   Sa, Seung Hoon ^a   Park, Hyung Ho ^a   Suh, Kyung Soo ^b   Oh, Kyung Hui ^c  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c National Institute of Technology and Quality   (South Korea)

Author keywords

GaAs etching; HCl H3PO4; Surface properties

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORROSION; ETCHING; HYDROCHLORIC ACID; MORPHOLOGY; PHOSPHORIC ACID; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SELECTIVE CORROSIVE ATTACK;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031245442     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00485-9     Document Type: Article

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