Formation of a buried oxide film at the damage peak induced by oxygen implantation into a Si substrate

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2188-2190

  Ogura, Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COALESCENCE; FILM GROWTH; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; SUBSTRATES;

BURIED OXIDE FILMS;

SEMICONDUCTING SILICON;

EID: 0032608064     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123796     Document Type: Article

References (10)

1. K. Izumi, M. Doken, and H. Ariyoshi, Electron. Lett. 14, 593 (1978).
2. Y. Li, J. A. Kilner, A. K. Robinson, P. L. F. Hemment, and C. D. Marsh, J. Appl. Phys. 70, 3605 (1991).
3. S. Nakashima and K. Izumi, Electron. Lett. 26, 1647 (1990).
4. S. Nakashima and K. Izumi, J. Mater. Res. 8, 523 (1993).
5. A. Ogura, J. Electrochem. Soc. 145, 1735 (1998).
6. K. Wada, H. Nakanishi, H. Takaoka, and N. Inoue, J. Cryst. Growth 57, 535 (1982).
7. J.-P. Colinge, Silicon-on-Insulator Technology: Material to VLSI, 2nd ed. (Klower Academic Publisher, Boston, 1997).
8. A. Ogura, T. Tatsumi, T. Hamajima, and H. Kikuchi, Appl. Phys. Lett. 69, 1367 (1996).
9. H. Ono, T. Ikarashi, and A. Ogura, Appl. Phys. Lett. 72, 2853 (1998).
10. Y. Ishikawa and N. Shibata, Appl. Phys. Lett. 61, 1543 (1992).