Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

Chinese Physics

Volumn 15, Issue 4, 2006, Pages 792-797

  Zhang, En Xia ^a,c   Qian, Cong ^a   Zhang, Zheng Xuan ^a   Lin, Cheng Lu ^a   Wang, Xi ^a   Wang, Ying Min ^b   Wang, Xiao He ^b   Zhao, Gui Ru ^b   En, Yun Fei ^c   Luo, Hong Wei ^c   Shi, Qian ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

^c China Electronic Product Reliability   (China)

Author keywords

Ion implantation; Separation by implanted oxygen; Silicon on insulator; Total dose irradiation effect

Indexed keywords

ELECTRON TRAPS; HARDNESS; ION IMPLANTATION; IRRADIATION; RADIATION HARDENING;

BOX LAYERS; SEPARATION-BY-IMPLANTED-OXYGEN; SILICON IMPLANTATION; TOTAL-DOSE IRRADIATION EFFECT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33645653757     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/4/020     Document Type: Article

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