Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 400-414

  Matsumura, A ^a   Hamaguchi, I ^a   Kawamura, K ^a   Sasaki, T ^a   Takayama, S ^a   Nagatake, Y ^a  

^a Wacker NSCE Corporation   (Japan)

Author keywords

300 mm; Buried oxide (BOX); Gate oxide integrity; Internal thermal oxidation (ITOX); Nitrogen doped Czochralski silicon; Separation by implanted oxygen (SIMOX); Silicon; Silicon on insulator (SOI); Ultra thin silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ION IMPLANTATION; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION;

INTERNAL THERMAL OXIDATION (ITOX);

SILICON WAFERS;

EID: 0037395031     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00913-9     Document Type: Article

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