Nucleation and diffusion during growth of ternary Co1-x Nix Si2 thin films studied by complementary techniques in real time

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Smeets, D ^a   Demeulemeester, J ^a   De Keyser, K ^b   Deduytsche, D ^b   Detavernier, C ^b   Comrie, C M ^c   Theron, C C ^d   Lavoie, C ^e   Vantomme, A ^a  

^a KU LEUVEN   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c UNIVERSITY OF CAPE TOWN   (South Africa)

^d MATERIALS RESEARCH GROUP   (South Africa)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL ACTIVATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DIFFUSION; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GROWTH KINETICS; LIGHT; LIGHT SCATTERING; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SHEET RESISTANCE; SOLIDS; THICK FILMS; THIN FILMS;

APPARENT ACTIVATION ENERGIES; BOUNDARY DIFFUSIONS; COMPLEMENTARY TECHNIQUES; CONTROLLED GROWTHS; DIFFERENT MICROSTRUCTURES; DISILICIDE; GROWTH PROCESSES; HIGH THERMALS; KISSINGER; LARGE GRAINS; LASER LIGHT SCATTERINGS; LOW RESISTIVITIES; LOWER DENSITIES; NUCLEATION BARRIERS; ONE HANDS; REAL TIMES; RESISTANCE MEASUREMENTS; RUTHERFORD BACKSCATTERING SPECTROMETRIES; SHEET RESISTANCE MEASUREMENTS; TERNARY FILMS; X-RAY DIFFRACTIONS;

FILM GROWTH;

EID: 56349098864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013449     Document Type: Article

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