Activation energy for Ni2Si and NiSi formation measured over a wide range of ramp rates

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 193-198

  Colgan, E G ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Annealing; Evaporation; Nickel; Suicides

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC RESISTANCE MEASUREMENT; EVAPORATION; HEATING; METALLIC FILMS; NICKEL; PHASE COMPOSITION; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS;

IN SITU RESISTANCE MEASUREMENTS; KISSINGER PLOTS; NICKEL SILICIDES; PHASE FORMATION SEQUENCE; RAMP RATES; SAPPHIRE SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030163952     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08013-9     Document Type: Article

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